SCG3139K Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – -0.66 A, -20 V, RDS(O%) 520 m
(ohm) P Channel Enhancement MOSFET

Elektronische Bauelemente
SCG3139K
-0.66 A, -20 V, R_{DS(O )} 520 mΩ
P Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low on-resistance
Fast switching speed
Drive circuits can be simple
Parallel use is easy
Low voltage drive makes this device ideal for
portable equipment
APPLICATION
Interfacing
Switching
MARKING
39K
PACKAGE INFORMATION
Package
MPQ
SOT-523
3K
Leader Size
7 inch
SOT-523
A
M
3
Top View
CB
1
2
K
L
E
3
1
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.5
1.7
1.45 1.75
0.7
0.9
0.7
0.9
0.9
1.1
0.15 0.35
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
-
0.1
0.55 REF.
0.1
0.2
-
0.5 TYP.
0.25 0.35
Top View
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current ¹
ID
Pulsed Drain Current (tp=10µs)
IDM
Total Power Dissipation ¹
PD
Lead Temperature for Soldering Purposes
(1/8” from case for 10S)
TL
Operating Junction & Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-ambient ¹
RθJA
Notes:
1. Surface mounted on FR4 board using the minimum recommended pad size.
Ratings
-20
±12
-0.66
-1.2
150
260
150, -55~150
833
Unit
V
V
A
A
mW
°C
°C
°C / W
http://www.SeCoSGmbH.com/
16-Jan-2017 Rev.A
Any changes of specification will not be informed individually.
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