SCG2019_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SCG2019
-0.62A , -20V , R_DS(ON) 810 m
P-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low R_DS(on) and to
ensure minimal power loss and heat dissipation.
MECHANICAL DATA
 Trench Technology
 Supper high density cell design
 Excellent ON resistance
 Extremely Low Threshold Voltage
APPLICATION
 DC-DC converter circuit
 Load Switch
MARKING
P9^

 = Date Code
PACKAGE INFORMATION
Package
MPQ
SOT-523
3K
Leader Size
7 inch
SOT-523
A
M
3
Top View
CB
1
2
K
L
E
3
1
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.5
1.7
1.45 1.75
0.7
0.9
0.7
0.9
0.9
1.1
0.15 0.35
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
-
0.1
0.55 REF.
0.1
0.2
-
0.5 TYP.
0.25 0.325
Top View
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current ¹
T_A= 25°C
T_A= 70°C
Power Dissipation ¹
T_A= 25°C
T_A= 70°C
Continuous Drain Current ²
T_A= 25°C
T_A= 70°C
Power Dissipation ²
Pulsed Drain Current ³
T_A= 25°C
T_A= 70°C
Lead Temperature
Operating Junction & Storage Temperature Range
V_DS
V_GS
I_D
P_D
I_D
P_D
I_DM
T_L
T_J, T_STG
Rating
10S
Steady State
-20
±5
-0.73
-0.62
-0.58
-0.5
0.38
0.28
0.24
0.18
-0.61
-0.55
-0.49
-0.44
0.27
0.22
0.17
0.14
-1.2
260
150, -55~150
Unit
V
V
A
W
A
W
A
°C
°C
http://www.SeCoSGmbH.com/
15-Jul-2014 Rev. B
Any changes of specification will not be informed individually.
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