SBR2045 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – 20.0 Amp Schottky Barrier Rectifiers

Elektronische Bauelemente
SBR2045
VOLTAGE 45 V
20.0 Amp Schottky Barrier Rectifiers
FEATURES
 Low forward voltage drop
 High current capability
 High reliability
 High surge current capability
 Epitaxial construction
RoHS compliant product
A suffix of “-C” specifies halogen free
MECHANICAL DATA
 Case: Molded plastic
 Epoxy: UL94V-0 rate flame retardant
 Lead: Lead solderable per MIL-STD-202
method 208 guaranteed
 Polarity: As Marked
 Mounting position: Any
 Weight: 1.933 grams (Approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25°C ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TO-220
B
N
D
E
MA
P
O
H
JC
K
G
L
L
F
Dimensions in millimeters
PIN 1
PIN 3
CASE
PIN 2
REF.
A
B
C
D
E
F
G
H
Millimeter
Min. Max.
14.22 16.51
9.65 10.67
12.70 14.73
3.56 4.90
0.51 1.45
2.03 2.92
0.31 0.76
4.93 (TYP)
REF.
J
K
L
M
N
O
P
Millimeter
Min. Max.
1.09 1.78
0.38 1.02
2.39 2.69
2.50 3.43
3.10 4.09
8.38 9.65
0.89 1.45
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 1
Peak Forward Surge Current, 8.3 ms single half sine-wave
Superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage (I_F = 10 Amps)
Maximum DC Reverse Current at Rated DC
T_A = 25°C
Blocking Voltage
T_A = 100°C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance R_JC (Note 2)
Operating Temperature Range T_J
Storage Temperature Range T_STG
NOTES:
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance Junction to Ambient
SYMBOL
V_RRM
V_RSM
V_DC
I_F
VALUES
45
45
45
20
I_FSM
V_F
I_R
C_J
R_JA
T_J
T_STG
180
0.59
0.5
15
700
3.0
-50 ~ +150
-65 ~ +175
UNITS
V
V
V
A
A
V
mA
mA
pF
°C /W
°C
°C
http://www.SeCoSGmbH.com/
11-Jun-2010 Rev. B
Any changes of specification will not be informed individually.
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