SBL40U60 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – 60V, 40A Low VF Planar MOS Barrier Schottky Rectifier

Elektronische Bauelemente
SBL40U60
60V, 40A
Low VF Planar MOS Barrier Schottky Rectifier
FEATURES
Planar MOS Schottky technology
Low forward voltage drop
High current capability
High reliability
High surge current capability
Epitaxial construction
RoHS Compliant Product
A suffix of “-C” specifies halogen free
TO-220
B
N
D
E
MA
O
P
H
JC
K
G
L
L
F
REF.
Millimeter
Min. Max.
REF.
1
A
14.22 16.51
J
B
9.57 10.90
K
2
C
12.50 14.75
L
D
3.56 5.10
M
3
E
0.51 1.47
N
F
2.03 3.19
O
G
0.28 0.76
P
H
2.95
4.5
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise s pecified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameter
Symbol
Rating
Maximum Recurrent Peak Reverse Voltage
VRRM
60
Working Peak Reverse Voltage
VRSM
60
Maximum DC Blocking Voltage
VDC
60
Maximum Average Forward
(Per Leg)
20
Rectified Current
IF
(Per Device)
40
Peak Forward Surge Current@ 8.3 ms single half
sine-wave superimposed on rated load (JEDEC method)
IFSM
280
Voltage Rate of Chance (Rated VR)
Typical Thermal Resistance from Junction to Case
Operating and Storage Temperature Range
dv/dt
RθJC
TJ, TSTG
10000
2
-40~150
Millimeter
Min. Max.
0.7 1.78
0.38 1.11
2.01 3.07
2.22 3.43
3.10 4.31
8.10 9.65
1.18 Typ.
Unit
V
V
V
A
A
V / µs
°C /W
°C
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Typ.
0.35
Maximum Instantaneous
Forward Voltage
0.38
VF
0.56
0.53
Maximum DC Reverse Current
at Rated DC Blocking Voltage ²
-
IR
-
Typical Junction Capacitance ¹
CJ
600
Notes:
1. Measured at 1MHz and applied reverse voltage of 5.0V D.C.
2. Pulse Test：Pulse width=300µs, duty cycle≦2.0%.
Max.
0.39
0.42
0.6
-
0.5
30
-
Unit
V
mA
pF
Test Condition
IF=3A, TJ=25°C
IF=5A, TJ=25°C
IF=20A, TJ=25°C
IF=20A, TJ=125°C
TJ=25°C
TJ=100°C
http://www.SeCoSGmbH.com/
12-Sep-2016 Rev. B
Any changes of specification will not be informed individually.
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