SBESD0801S-12 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – 20W, 12V Ultra Low Capacitance Transient Voltage Suppressors

Elektronische Bauelemente
SBESD0801S-12
20W, 12V
Ultra Low Capacitance Transient Voltage Suppressors
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SBESD0801S-12 is a low capacitance Transient Voltage
Suppressor (TVS) designed to provide electrostatic
discharge (ESD) protection for high-speed data interfaces.
SBESD0801S-12 uses ultra-small DFN1006-2L package.
Each device can protect one high-speed data line. It offers
system designers flexibility to protect single data line where
space is a premium concern. The combined features of low
capacitance, ultra small size and high ESD robustness make
SBESD0801S-12 ideal for high-speed data port and
high-frequency line applications such as cellular phones and
HD visual devices.
DFN1006-2L
FEATURES
Low clamping voltage
Low leakage current
Low capacitance
APPLICATIONS
Serial ATA
USB ports
PCI express
REF.
A
B
C
D
Millimeter
Min. Max.
0.95 1.05
0.55 0.65
0.2
0.4
0.45 0.55
REF.
E
F
G
Millimeter
Min. Max.
0.65 TYP.
0.3
0.5
0.00 0.05
MARKING
C5
PACKAGE INFORMATION
Package
MPQ
DFN1006-2L
10K
Leader Size
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Rating
Symbol
IEC 61000-4-2
Air discharge
Contact discharge
VESD
Peak Pulse Power@ tp=8/20µs
PPK
Operating Temperature
TOP
Storage Temperature Range
TSTG
Value
±15
±12
20
-55~125
-55~150
Unit
kV
W
°C
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Condition
Min.
Reverse Working Voltage
VRWM
-
Reverse Leakage Current
IR
VRWM=12V
-
Reverse Breakdown Voltage
Clamping Voltage
Junction Capacitance
VBR
IT=1mA
-
VC
IPP=1A, tp=8/20µs
-
CJ
VR=0, f=1MHz
-
Typ.
-
10
16
18
0.35
Max.
12
1000
-
20
0.5
Unit
V
nA
V
V
pF
http://www.SeCoSGmbH.com/
16-Aug-2016 Rev. A
Any changes of specification will not be informed individually.
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