SBAS16 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – High-Speed Switching Diode

Elektronische Bauelemente
SBAS16
High-Speed
Switching Diode
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
Description
A
* The SBAS16 is designed for high-speed switching
application in hybrid thick and thin-film circuits.
L
* The devices is manufactured by the silicon epitaxial
3
planar process and packed in a plastic surface
S
Top View
B
2
1
mount package.
Marking
D
G
C
J
H
K
SC-59
Dim Min Max
A
2.70 3.10
B
1.40 1.60
C
1.00 1.30
D
0.35 0.50
G
1.70 2.10
H
0.00 0.10
J
0.10 0.26
K
0.20 0.60
L
0.85 1.15
S
2.40 2.80
All Dimension in mm
A6^-
Absolute Maximum Ratings at TA = 25 ^oC
Parameter
Reverse Voltage
Repetitive Reverse Voltage
Forward Current
Repetitive Forward Current
Forward Surge Current (1ms)
Total Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VR
VRR
IF
IFR
IFSM
PD
Tj, Tstg
Ratings
75
85
250
500
1000
200
-65~+150
Unit
V
V
mA
mA
mW
mW
o_C
Characteristics at TA = 25к
Characteristic
Symbol
Min.
Reverse Breakdown Voltage
V(BR)
75
VF(1)
-
Forward Voltage
VF(2)
-
VF(3)
-
VF(4)
-
Reverse Current
IR
-
Total Capacitance
CT
Reverse Recovery Time
Trr
-
Max.
-
715
855
1000
1250
1
2
6
Unit
Test Conditions
V
IR=100uA
mV
IF=1mA
mV
IF=10mA
mV
IF=50mA
mV
IF=150mA
uA
VR=75V
pF
VR=0, f=1MHz
nS
IF=IR=10mA, RL=100Ó¨ measured at IR=1mA
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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