S9018T_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic-Encapsulate Transistors

FEATURE
S9018T
NPN Plastic-Encapsulate Transistors
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
4.55±0.2
TO-92
3 . 5 ±0. 2
Power dissipation
PCM : 0.4
Collector current
W (Tamb=25^oC)
ICM: 0.05 A
Collector-base voltage
V_(BR)CBO : ₂₅
V
Operating and storage junction temperature range
Tj, Tstg: -55 ^oC to +150 ^oC
0.4
6
+0 . 1
–0.1
0 . 4 3 ^+– _{00.. 0078}
(1.27 Typ.)
123
1.25^{+–00..22}
2.54±0.1
1: Emitter
2: Base
3: Collector
ELECTRICAL CHARACTERISTICS (Tamb=25 ^oC unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
V(BR)CBO
Ic= 100µA, IE=0
25
Collector-emitter breakdown voltage V(BR)CEO
Ic= 0. 1mA, IB=0
18
Emitter-base breakdown voltage
V(BR)EBO
IE= 100µA, IC=0
4
Collector cut-off current
ICBO
VCB= 20V, IE=0
Collector cut-off current
ICEO
VCE= 15V, IB=0
Emitter cut-off current
IEBO
VEB= 3V, IC=0
DC current gain
hFE(1)
VCE= 5V, IC= 1mA
28
Collector-emitter saturation voltage
VCE(sat)
IC=10mA, IB=1mA
Base-emitter saturation voltage
VBE(sat)
IC=10mA, IB=1mA
MAX
0.1
0.1
0.1
270
0.5
1.4
UNIT
V
V
V
µA
µA
µA
V
V
Transition frequency
fT
VCE=5 V, IC=5 mA
f =400MHz
600
MHz
CLASSIFICATION OF h_FE(1)
Rank
D
E
Range
28-45
39-60
F
54-80
G
72-108
H
97-146
I
132-198
J
180-270
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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