S9015_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Low Frequency, Low Noise Amplifier

Elektronische Bauelemente
S9015
PNP Silicon
Low Frequency, Low Noise Amplifier
FEATURES
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
Collector
3
3
Power dissipation
PCM : 0.2 W
Collector Current
ICM : -0.1 A
Collector-base voltage
V(BR)CBO : -50 V
Operating & storage junction temperature
Tj, Tstg : - 55^OC ~ + 150^OC
V
1
2
A
L
3
Top View
1
2
G
1
Base
BS
2
Emitter
C
D
H
K
J
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
ELECTRICAL CHARACTERISTICS ( Tamp.=25^OC unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE(sat)
Test conditions
Ic= -100µA, IE=0
Ic= -0.1mA, IB=0
IE=-100µA, IC=0
VCB=-50V, IE=0
VEB= -5V, IC=0
VCE=-5V, IC= -1mA
IC=-100mA, IB= -10mA
IC=-100mA, IB=-10mA
MIN
-50
-45
-5
200
TYP
Transition frequency
fT
VCE=-5V, IC= -10mA
150
f=30MHz
MAX UNIT
V
V
V
-0.1
µA
-0.1
µA
1000
-0.3
V
-1
V
MHz
CLASSIFICATION OF h_FE(1)
Rank
Range
L
200-450
H
450-1000
DEVICE MARKING
S9015 = M6
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
Page 1 of 2