S9015T_15 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor

Elektronische Bauelemente
S9015T
-0.1A , -50V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
General Purpose Switching and Amplification.
High Total Power Dissipation.(PC=0.45W)
High h_FE and Good Linearity
TO-92
CLASSIFICATION OF h_FE
Product-Rank S9015T-A S9015T-B
Range
60~150
100~300
S9015T-C
200~600
S9015T-D
400~1000
2
Base
Collector
3
1 Emitter
2 Base
3 Collector
1
Emitter
REF.
A
B
C
D
E
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
REF.
F
G
H
J
K
Millimeter
Min. Max.
0.30 0.51
1.27 TYP.
1.10 1.40
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
VCBO
-50
Collector to Emitter Voltage
VCEO
-45
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VEBO
IC
PC
TJ, TSTG
-5
-0.1
0.45
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test condition
Collector to Base Breakdown Voltage
V(BR)CBO
-50
Collector to Emitter Breakdown Voltage V(BR)CEO
-45
Emitter to Base Breakdown Voltage
V(BR)EBO
-5
Collector Cut-Off Current
ICBO
-
Emitter Cut-Off Current
IEBO
-
DC Current Gain
hFE
60
Collector to Emitter Saturation Voltage VCE(sat)
-
Base to Emitter Saturation Voltage
VBE(sat)
-
Transition Frequency
fT
100
-
-
V IC= -0.1mA, IE=0
-
-
V IC= -1mA, IB=0
-
-
V IE= -0.1mA, IC=0
-
-0.05 µA VCB= -50V, IE=0
-
-0.05 µA VEB= -5V, IC=0
-
1000
VCE= -5V, IC= -1mA
-
-0.3
V IC= -100mA, IB= -10mA
-
-1
V IC= -100mA, IB= -10mA
-
-
MHz VCE= -5V, IC= -10mA, f=30MHz
http://www.SeCoSGmbH.com/
23-Aug-2012 Rev. A
Any changes of specification will not be informed individually.
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