S9014W_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Plastic Encapsulated Transistor

Elektronische Bauelemente
S9014W
NPN Silicon
Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
Complementary to S9015W
PACKAGING INFORMATION
Weight: 0.0074 g
MARKING CODE
J6
1
Base
Collector
3
2
Emitter
SOT-323
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.15 1.35
0.80 1.10
1.20 1.40
0.20 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
-
-
0.650 TYP.
ABSOLUTE MAXIMUM RATINGS (at T_A = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current – Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
Ratings
50
45
5
100
200
+150, -55 ~ +150
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS (at T_A = 25°C unless otherwise specified)
Parameter
Collector-base Breakdown Voltage
Collector-emitter Breakdown Voltage
Emitter-base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Collector-emitter Saturation Voltage
Base-emitter Saturation Voltage
DC Current Gain
Transition Frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CEO
I_EBO
V_CE(sat)
V_BE(sat)
h_FE
fT
Min.
50
45
5
-
-
-
-
200
150
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
100
300
1000
1000
-
Unit
V
V
V
nA
nA
nA
mV
mV
MHz
Test Conditions
I_C = 100μA, I_E = 0
I_C = 0.1mA, I_B = 0
I_E = 100μA, I_C = 0
V_CB = 50 V, I_E = 0
V_CE = 35V, I_B = 0
V_EB = 3V, I_C = 0
I_C = 100mA, I_B = 5mA
I_C = 100mA, I_B = 5mA
V_CE = 5V, I_C = 1mA
V_CE = 5V, I_C = 10mA, f = 30MHz
CLASSIFICATION OF hFE
Rank
hFE
L
200 - 450
H
450 - 1000
01-June-2002 Rev. A
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