S9014T Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Pre-Amplifier, Low Level & Low Noise

Elektronische Bauelemente
S9014T
NPN Silicon
Pre-Amplifier, Low Level & Low Noise
FEATURES
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
4.55±0.2
3 . 5 ±0. 2
Power dissipation
PCM : 0.4 W
Collector current
ICM : 0.1 A
Collector-base voltage
V(BR)CBO : 50 V
Operating & storage junction temperature
Tj, Tstg : - 55^OC ~ + 150^OC
0.4
6
+0 . 1
–0.1
0 . 4 3 ^+– _{00.. 0078}
(1.27 Typ.)
123
1.25⁺–0⁰.^.22
2.54±0.1
1: Emitter
2: Base
3: Collector
ELECTRICAL CHARACTERISTICS ( Tamp.=25^OC unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
V_(BR)CBO
Ic= 100μA， I_E=0
50
Collector-emitter breakdown voltage
V_(BR)CEO
Ic= 0.1mA， I_B=0
45
Emitter-base breakdown voltage
V_(BR)EBO
I_E=100μA， I_C=0
5
Collector cut-off current
I_CBO
V_CB=50 V , I_E=0
Collector cut-off current
I_CEO
V_CE=35V , I_B=0
Emitter cut-off current
I_EBO
V_EB= 3V , I_C=0
DC current gain
h_FE
V_CE=5V, I_C= 1mA
60
Collector-emitter saturation voltage
V_CE(sat) I_C=100 mA, I_B= 5mA
Base-emitter saturation voltage
V_BE(sat) I_C=100 mA, I_B= 5mA
Transition frequency
f_T
V_CE=5V, I_C= 10mA
f=30MHz
150
MAX UNIT
V
V
V
0.1
μA
0.1
μA
0.1 μA
1000
0.3
V
1
V
MHz
CLASSIFICATION OF h_FE(1)
Rank
A
Range
60-150
B
100-300
C
200-600
D
400-1000
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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