S9013 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – PLASTIC ENCAPSULATE TRANSISTORS

Elektronische Bauelemente
S9013
NPN Silicon
General Purpose Transistor
FEATURES
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
Collector
3
3
Power dissipation
PCM : 0.3 W
Collector Current
ICM : 0.5 A
Collector-base voltage
V(BR)CBO : 40 V
Operating & storage junction temperature
Tj, Tstg : - 55^OC ~ + 150^OC
V
1
2
A
L
3
Top View
1
2
G
1
Base
BS
2
Emitter
C
D
H
K
J
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
ELECTRICAL CHARACTERISTICS ( Tamp.=25^OC unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP MAX
Collector-base breakdown voltage
V(BR)CBO
Ic= 100ȰAđ IE=0
40
Collector-emitter breakdown voltage
V(BR)CEO
Ic= 0.1mAđ IB=0
25
Emitter-base breakdown voltage
V(BR)EBO
IE=100ȰAđ IC=0
5
Collector cut-off current
ICBO
VCB=40 V , IE=0
0.1
Collector cut-off current
ICEO
VCE=20V , IB=0
0.1
Emitter cut-off current
IEBO
VEB= 5V , IC=0
0.1
DC current gain
HFE(1)
VCE=1V, IC= 50m A
120
350
HFE(2)
VCE=1V, IC=500mA
40
Collector-emitter saturation voltage
VCE(sat) IC=500 mA, IB= 50m A
0.6
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF h_FE(1)
ͮ͟ͻ͸
ͮ͟ͻʹͲ
VBE(sat)
fT
IC=500 mA, IB= 50m A
VCE=6V, IC= 20mA
f=30MHz
͙Ḥ
̺̾̿̽̿̽̽Ḥ
1.2
150
͕Ḥ
̺̿̽̽̀͂̽Ḥ
UNIT
V
V
V
È°A
È°A
È°A
V
V
MHz
http://www.SeCoSGmbH.com
01-Jun-2005 Rev.B
Any changing of specification will not be informed individual
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