S9012T Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Epitaxial Silicon Transistor

FEATURE
S9012T
PNP Epitaxial Silicon Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
4.55±0.2
TO-92
3 . 5 ±0. 2
Power dissipation
P_CM : 0.625 W Tamb=25
Collector current
I_CM: -0.5 A
Collector-base voltage
V_{(BR)CBO : -40 V}
Operating and storage junction temperature range
Tj, T_{stg: -55 to +150}
0.4
6
+0 . 1
–0.1
0 . 4 3 ^+– _{00.. 0078}
(1.27 Typ.)
123
1.25^{+–00..22}
2.54±0.1
1: Emitter
2: Base
3: Collector
ELECTRICAL CHARACTERISTICS˄Tamb=25ć unless otherwise specified˅
Parameter
Symbol
Test conditions
MIN
TYP
MAX UNIT
Collector-base breakdown voltage
V(BR)_CBO Ic= -100­A ˈ I_E=0
-40
V
Collector-emitter breakdown voltage
V(BR)_CEO I_C= -1 mA , I_B=0
-25
V
Emitter-base breakdown voltage
V(BR)_EBO I_E= -100­Aˈ I_C=0
-5
V
Collector cut-off current
I_CBO
V_CB=- 40V , I_E=0
-0.1
­A
Collector cut-off current
I_CBO
V_CB=-20V , I_E=0
-0.1
­A
Emitter cut-off current
I_EBO
V_EB=- 5V, I_C=0
-0.1
­A
DC current gain
h_FE(1)
V_CE=-1V, I_C=-50mA
64
300
h_FE(2)
V_CE=-1V, I_C= -500mA
40
Collector-emitter saturation voltage
V_CE(sat)
I_C= -500 mA, I_B= -50mA
-0.6
V
Base-emitter voltage
V_BE(sat)
I_C= -500 mA, I_B=- 50mA
-1.2
V
Transition frequency
f_T
V_CE=-6V,I_C=-20mA,
f=30MHz
150
MHz
CLASSIFICATION OF h_FE(1)
Rank
D
Range
64-91
E
78-112
F
96-135
G
112-166
H
144-202
I
190-300
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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