S9012 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – TO-92 Plastic-Encapsulate Transistors

Elektronische Bauelemente
S9012
PNP Silicon
General Purpose Transistor
FEATURES
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
Collector
3
3
Power dissipation
PCM : 0.3 W
Collector Current
ICM : - 0.5 A
Collector-base voltage
V(BR)CBO : - 40 V
Operating & storage junction temperature
Tj, Tstg : - 55^OC ~ + 150^OC
V
1
2
A
L
3
Top View
1
2
G
1
Base
BS
2
Emitter
C
D
H
K
J
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
ELECTRICAL CHARACTERISTICS ( Tamp.=25^OC unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= -100ȰAđ IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic= -1mAđ IB=0
-25
V
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
V(BR)EBO
IE= -100ȰAđ IC=0
-5
ICBO
VCB= - 40V , IE=0
ICEO
VCE= - 20V , IB=0
V
- 0.1
È°A
- 0.1
È°A
Emitter cut-off current
IEBO
VEB= - 5V , IC=0
- 0.1
È°A
DC current gain
HFE(1)
VCE= -1V , IC=- 50 mA
120
400
HFE(2)
VCE= -1V , IC= -500mA
40
Collector-emitter saturation voltage
VCE(sat) IC=-500mA, IB=- 50mA
-0.6
V
Base-emitter saturation voltage
VBE(sat)
IC=- 500mA, IB=- 50m A
-1.2
V
Transition frequency
VCE= -6V, IC= - 20mA
fT
150
f=30MHz
MHz
CLASSIFICATION OF h_FE(1)
Rank
Range
L
120-200
H
200-350
J
300-400
DEVICE MARKING
http://www.SeCoSGmbH.com
17-Dec-2007 Rev.B
S9012 =2T1
Any changing of specification will not be informed individual
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