S8GBP20_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – 8.0 Amp Glass Passivited Bridge Rectifiers

Elektronische Bauelemente
S8GBP20-C ~ S8GBP80-C
Voltage 200V ~ 800V
8.0 Amp Glass Passivited Bridge Rectifiers
RoHS Compliant Product
FEATURES
Ideal for printed circuit board
Low forward voltage drop, high current capability
Reliable low cost construction utilizing molded plastic
technique results in inexpensive product
These are Halogen & Pb Free components
This series is UL recognized under Component Index,
file number E255340
GBP
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
13.6 14.0
10.6
11
1
1.5
12.6 13.8
1.05 1.25
0.65 0.85
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
2.9
3.3
3.5
4.1
1.8
2.4
0.4
0.6
6.7
7.3
φ3.0 φ3.4
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameter
Symbol
S8GBP20-C
Part Number
S8GBP40-C S8GBP60-C S8GBP80-C
Maximum Recurrent Peak Reverse Voltage
VRRM
200
Average Rectified Output
TC=126°C
(with heat sink)
Current @60HZ sine
wave, R-load
TA=25°C
IO
(without heat sink)
Peak Forward Surge Current @
60HZ sine wave, 1 cycle, TJ=25°C
IFSM
Maximum Peak Forward Voltage³
VFM
Peak Reverse Current ²
IRRM
I²t Rating for Fusing @3ms≤t＜8.3ms,
I²t
TJ=25°C,Rating of per diode
Mounting Torque @ Recommend torque:5kg·cm TOR
Dielectric Strength¹
Vdis
400
600
800
8
1.4
165
1
10
113
8
2
Typical Thermal Resistance (with heat sink)
RθJC
1.5
Typical Thermal Resistance(without heat sink)
RθJA
55
Typical Thermal Resistance(without heat sink)
RθJL
15
Operating and Storage temperature range
TJ,TSTG
Notes：
1. Terminals to case，AC 1 minute
2. VRM=VRRM, Pulse measurement, Rating of per diode.
3. IFM=4.0A, Pulse measurement, Rating of per diode
150, -55~150
Unit
V
A
A
V
µA
A²s
Kg‧cm
kV
°C/W
°C/W
°C/W
°C
http://www.SeCoSGmbH.com/
09-Jul-2012 Rev. A
Any changes of specification will not be informed individually.
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