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| S8550T_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – General Purpose Transistor | |||
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Elektronische Bauelemente
S8550T
PNP Silicon
General Purpose Transistor
RoHS Compliant Product
A suffix of â-Câ specifies halogen and lead free
FEATURES
z Excellent hFE linearity
4.55 0.2
TO-92
3.5 0.2
(1.27 Typ.)
12 3
1.25 0.2
2.54 0.1
0.46 0.1
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Total Power Dissipation
Junction, Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ, TSTG
Ratings
-40
-25
-5
-500
625
+150, -55 ~ +150
0.43
0.08
0.07
1: Emitter
2: Base
3: Collector
Unit
V
V
V
mA
mW
â
ELECTRICAL CHARACTERISTICS (TAMB = 25°C unless otherwise specified)
Parameter
Collector-base Breakdown Voltage
Collector-emitter Breakdown Voltage
Emitter-base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-emitter Saturation Voltage
Base-emitter Saturation Voltage
Transition Frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Min.
-40
-25
-5
-
-
-
85
50
-
-
150
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-0.1
-0.1
-0.1
400
-
-0.6
-1.2
-
Unit
V
V
V
μA
μA
μA
V
V
MHz
Test Conditions
IC = -100 μA, IE = 0
IC = -1 mA, IB = 0
IE = -100 μA, IC = 0
VCB = -40 V, IE = 0
VCE = -20 V, IB = 0
VEB = -3 V, IC = 0
VCE = -1 V, IC = -50 mA
VCE = -1 V, IC = -500 mA
IC = -500 mA, IB = -50 mA
IC = -500 mA, IB = -50 mA
VCE = -6 V, IC= -20 mA, f = 30 MHz
CLASSIFICATION OF hFE
Rank
B
Range
85 - 160
C
120 - 200
D
160 - 300
D3
300 - 400
http://www.SeCoSGmbH.com/
01-June-2007 Rev. C
Any changes of specification will not be informed individually.
Page 1 of 2
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