S8050T_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – General Purpose Transistor

Elektronische Bauelemente
S8050T
NPN Silicon
General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
z Complimentary to S8550T
z Collector Current: I_C = 0.5 A
4.55 0.2
TO-92
3.5 0.2
(1.27 Typ.)
12 3
1.25 0.2
2.54 0.1
0.46 0.1
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Total Power Dissipation
Junction, Storage Temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
T_J, T_STG
Ratings
40
25
5
500
625
+150, -55 ~ +150
0.43
0.08
0.07
1: Emitter
2: Base
3: Collector
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS (T_AMB = 25°C unless otherwise specified)
Parameter
Collector-base Breakdown Voltage
Collector-emitter Breakdown Voltage
Emitter-base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-emitter Saturation Voltage
Base-emitter Saturation Voltage
Transition Frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CEO
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE(sat)
f_T
Min.
40
25
5
-
-
-
85
50
-
-
150
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
0.1
0.1
0.1
400
-
0.6
1.2
-
Unit
V
V
V
μA
μA
μA
V
V
MHz
Test Conditions
I_C = 100 μA, I_E = 0
I_C = 0.1 mA, I_B = 0
I_E = 100 μA, I_C = 0
V_CB = 40 V, I_E = 0
V_CE = 20 V, I_B = 0
V_EB = 5 V, I_C = 0
V_CE = 1 V, I_C = 50 mA
V_CE = 1 V, I_C = 500 mA
I_C = 500 mA, I_B = 50 mA
I_C = 500 mA, I_B = 50 mA
V_CE = 6 V, I_C= 20 mA, f = 30 MHz
CLASSIFICATION OF h_FE
Rank
B
Range
85 - 160
C
120 - 200
D
160 - 300
D3
300 - 400
http://www.SeCoSGmbH.com/
01-June-2005 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 2