S2N7002_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Small Signal MOSFET

Elektronische Bauelemente
S2N7002
115 mA, 60 V, R_DS(ON) = 7.5 
N-Ch Small Signal MOSFET
FEATURES
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
A
L
 Pb-Free Package is Available
PACKAGING INFORMATION
3
Top View
CB
1
1
2
Drain
3
Drain

K
E
D
3
2
702
..
1
Gate
2
Source
702 =Device Code
W =Date Code

Gate

Source
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min.
2.80
2.10
1.20
Max.
3.04
2.55
1.40
0.89 1.15
1.80 2.00
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min.
0.013
0.45
0.08
Max.
0.10
0.60
0.177
0.6 REF.
0.89 1.02
MAXIMUM RATINGS (at T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATING
Drain-Source Voltage
Drain-Gate Voltage(R_GS=1.0 MΩ)
Continuous Drain Current
T_C=25°C ¹
T_C=100°C ¹
Pulsed Drain Current ²
Continuous Gate-Source Voltage
Non-Repetitive Gate-Source Voltage(t_P≦50μS)
V_DSS
V_DGR
I_D
I_DM
V_GS
V_GSM
60
60
±115
±75
±800
±20
±40
THERMAL CHARACTERISTICS
Total Device Dissipation
FR-5 Board ³
T_A=25°C
Derate above 25°C
P_D
225
1.8
Thermal Resistance, Junction to Ambient
R_θJA
556
Junction and Storage Temperature
T_J, T_STG
-55~150
Note: 1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width ≦300μs, Duty Cycle ≦ 2.0%
3. FR-5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina
UNIT
Vdc
Vdc
mAdc
mAdc
mAdc
Vdc
Vpk
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (at T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITION
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
V_(BR)DSS
60
-
-
Zero
Gate
Voltage
Drain
Current
T_J
T_J
=25°C
=125°C
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
I_DSS
-
-
-
-
I_GSSF
-
-
I_GSSR
-
-
ON CHARACTERISTICS¹
1.0
500
100
-100
Gate Threshold Voltage
V_GS(th)
1.0
1.6
2.5
On-State Drain Current
I_D(ON)
500
-
-
Static Drain-Source On-State Voltage
V_DS(ON)
-
-
-
3.75
-
0.375
Static Drain-Source On-State Resistance
(T_A=25°C)
R_DS(ON)
-
1.4
7.5
-
1.8
7.5
Static Drain-Source On-State Resistance
(T_A=125°C)
R_DS(ON)
-
-
-
13.5
-
13.5
Forward Transconductance
g_FS
80
-
-
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
-
17
50
C_oss
-
10
25
C_rss
-
2.5
5.0
SWITCHING CHARACTERISTICS¹
Turn-On Delay Time
td_(ON)
-
7
20
Turn-Off Delay Time
td_(OFF)
-
11
40
BODY-DRAIN DIODE RATINGS
Diode Forward On-Voltage
V_SD
-
-
-1.5
Source Current Continuous(Body Diode)
I_S
-
-
-115
Source Current Pulsed
I_SM
-
-
-800
Note: 1. Pulse Test: Pulse Width ≦300μs, Duty Cycle ≦ 2.0%
Vdc
μAdc
nAdc
nAdc
V_GS = 0, I_D = 10μAdc
V_GS=0, V_DS = 60Vdc
V_GS=20Vdc
V_GS=-20Vdc
Vdc
mA
Vdc
Ω
Ω
mmhos
V_DS = V_GS, I_D =250μAdc
V_DS≧2.0V_DS(ON),V_GS=10Vdc
V_GS=10Vdc, I_D =500mAdc
V_GS=5Vdc, I_D =50mAdc
V_GS=10Vdc, I_D =500mAdc
V_GS=5Vdc, I_D =50mAdc
V_GS=10Vdc, I_D =500mAdc
V_GS=5Vdc, I_D =50mAdc
V_DS≧2V_DS(ON),I_D =200mAdc
pF V_DS=25Vdc, V_GS=0, f=1MHz
pF V_DS=25Vdc, V_GS=0, f=1MHz
pF V_DS=25Vdc, V_GS=0, f=1MHz
nS
V_DD=25Vdc, ,I_D500mAdc
R_G=25Ω,R_L=50Ω, V_GEN=10V
Vdc I_S=11.5mAdc,V_GS=0V
mAdc
mAdc
http://www.SeCoSGmbH.com/
15-Sep-2014 Rev. C
Any changes of specification will not be informed individually.
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