S2N7002W_15 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Elektronische Bauelemente
S2N7002W
115 mA, 60 V, R_DS(ON) = 7.5 Ω
N-Ch Small Signal MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
♦ Low on-resistance
♦ Low gate threshold voltage
♦ Low input capacitance
♦ Fast switching speed
♦ Low input/output leakage
♦ Ultra-small surface mount package
PACKAGE INFORMATION
Drain
3
SOT-323
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
Drain
3
6C
Drain
3
72
12
12
Gate Source Gate Source
X=Date Code
1
Gate
2
Source
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Drain-Source Voltage
V_DDS
Drain-Gate Voltage(R_GS=1.0MΩ)
Continuous Drain Current¹ (T_A=25°C)
Continuous Drain Current¹(T_A=100°C)
Pulsed Drain Current²
V_DGR
I_D
I_DM
Continuous Gate-Source Voltage
V_GS
Non-repetitive Gate-Source Voltage(t_P≦50µs)
V_GSM
THERMAL CHARACTERISTICS
Total Device Dissipation FR-5 Board³(T_A=25°C)
P_D
Derating above 25°C
Thermal Resistance, Junction to Ambient
R_θJA
Junction and Storage Temperature
T_J, T_STG
Notes:
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2.0%
3. FR-5=1.0*0.75*0.62 in.
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
2.00 2.40
1.15 1.35
0.80 1.00
1.20 1.40
0.30 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.00 0.10
0.425 REF.
0.10 0.25
-
-
0.650 TYP.
RATINGS
60
60
±115
±75
±800
±20
±40
225
1.8
556
-55~150
UNIT
Vdc
Vdc
mAdc
Vdc
Vpk
mW
mW/°C
°C/W
°C
18-Dec-2009 Rev. B
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