S2N7002SW Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – 0.38A, 60V, RDS(O) 2.8 ohm N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
S2 7002SW
0.38A, 60V, R_{DS(O )} 2.8 Ω
-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
S2N7002SW provides designers with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness. SOT-323 package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
FEATURES
Halogen free products available
ESD protected
Low R_DS(on)
APPLICATIONS
Low side load switch
Level shift circuits
DC-DC converter
Portable applications
MARKING
701
PACKAGE INFORMATION
Package
MPQ
SOT-323
3K
Leader Size
7 inch
SOT-323
A
L
3
Top View
CB
1
1
2
K
E
3
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 3.00
1.80 2.55
1.1
1.4
0.80 1.15
1.20 2.00
0.15 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.1 REF.
0.525 REF.
0.05 0.25
0.8 TYP.
0.65 TYP.
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Steady state, TA=25°C
Continuous Drain Current
Steady state, TA=85°C
ID
t＜5s, TA=25°C
t＜5s, TA=85°C
Pulsed Drain Current@ tp=10µs
IDM
Source Current (Body diode)
IS
Steady state
Total Device Power Dissipation ¹
PD
t＜5s
Thermal Resistance from
Steady state
Junction to Ambient ¹
t＜5s
RθJA
Gate-Source ESD Rating (HBM, method 3015)
Lead Temperature for Soldering Purposes@ 1/8’’ from
case for 10s
Operating Junction and Storage Temperature
ESD
TL
TJ, TSTG
Rating
60
±20
0.32
0.23
0.38
0.27
1.5
0.3
300
420
417
300
2
260
-55~150
Unit
V
V
A
A
A
mW
°C / W
kV
°C
°C
http://www.SeCoSGmbH.com/
26-Jul-2016 Rev. A
Any changes of specification will not be informed individually.
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