S2N7002KW_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement MOSFET

Elektronische Bauelemente
S2N7002KW
115mA, 60V
N-Channel Enhancement MOSFET
FEATURES
 Low on-resistance
 Fast switching Speed
 Low-voltage drive
 Easily designed drive circuits
 ESD protected:1500V
MARKING
RK
PACKAGE INFORMATION
Package
MPQ
SOT-323
3K
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
Leader Size
7’ inch

Gate
SOT-323
Drain

A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J

Source
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.15 1.35
0.80 1.10
1.20 1.40
0.20 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
-
-
0.650 TYP.
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL
Drain – Source Voltage
V_DSS
Continuous Gate – Source Voltage
V_GSS
Continuous Drain Current
I_D
Pulsed Drain Current
I_DP1
Continuous Reverse Drain Current
I_DR
Pulsed Reverse Drain Current
I_DRP1
Total Power Dissipation
P_D2
Channel & Storage Temperature Range
T_CH, T_STG
Note:
1. Pw≦10μS, Duty cycle≦1%
2. When mounted on a 1x0.75x0.062 inch glass epoxy board
RATING
60
±20
115
800
115
800
225
150, -55~150
UNIT
V
V
mA
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified, per element)
PARAMETER
SYMBOL MIN TYP MAX UNIT
TEST CONDITION
OFF CHARACTERISTICS ²
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V_(BR)DSS
I_DSS
I_GSS
60
-
-
-
-
1.0
-
-
±10
ON CHARACTERISTICS ²
V
V_GS=0V, I_D =10μA
μA V_DS=60V, V_GS=0V
μA V_DS=0V , V_GS=±20V
Gate-Threshold Voltage
Static Drain-Source On Resistance
Forward Transfer Admittance
V_GS(TH)
R_DS(ON)
g_FS*
1
1.85
2.5
V
V_DS= V_GS, I_D =250μA
-
-
7.5
Ω
V_GS=10V, I_D=0.5A
-
-
7.5
V_GS=5V, I_D=0.05A
80
-
-
ms V_DS=10V, I_D=0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_ISS
C_OSS
C_RSS
-
25
50
V_DS=25V
-
10
25
pF V_GS=0V
-
3.0
5
f=1MHz
SWITCHING CHARACTERISTICS
Turn-on Delay Time
Turn-off Delay Time
* Pw≦300μS, Duty cycle≦1%
T_d(ON) *
-
T_d(OFF) *
-
12
20
nS
V_DD=30V, I _D=0.2A
20
30
R_L=150Ω, V _Gs=10V, R_G=10Ω
http://www.SeCoSGmbH.com/
09-Apr-2014 Rev. B
Any changes of specification will not be informed individually.
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