S2N7002KT Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement MOSFET

Elektronische Bauelemente
S2N7002KT
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-523
FEATURES
 Low Gate Charge for Fast Switching.
 ESD Protected Gate.
APPLICATIONS
 Power Management Load Switch
 Portable Applications such as Cell Phones, Media Players,
Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc.
PACKAGE INFORMATION
REF.
A
B
C
D
G
J
Millimeter
Min.
1.50
0.75
0.60
0.23
Max.
1.70
0.95
0.80
0.33
0.50BSC
0.10 0.20
REF.
K
M
N
S
Millimeter
Min. Max.
0.30
---
---
011.005_oo0
1.50 1.70
MAXIMUM RATINGS (T_A=25℃ unless otherwise specified)
PARAMETER
SYMBOL
RATING
Drain-Source Voltage
V_DSS
30
Gate-Source Voltage
V_GSS
±10
Continuous Drain Current
I_D
154
Pulsed Drain Current
tp≦10μs
I_DM
618
Continuous Source Current (Body Diode)
Total Power Dissipation
Operating Junction Temperature Range
I_SD
154
P_D1
300
T_J
150
Operating Storage Temperature Range
T_STG
-55~150
Note 1. Surface—mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
UNIT
V
V
mA
mA
mA
mW
°C
°C
DEVICE MARKING
S2N7002KT = T6
09-Apr-2010 Rev. A
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