S2N7002K Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – 115mA, 60V N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
S2N7002K
115mA, 60V
N-Channel Enhancement Mode Power MOSFET
FEATURES
Low on resistance.
Fast switching speed.
Low-voltage drive.
Easily designed drive circuits.
Easy to parallel.
Pb-Free package is available.
ESD protected:2000V
DEVICE MARKING: RK
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
3 DRAIN
1
GATE _*
* Gate
Pretection
Diode
SOURCE 2
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.04
2.10 2.80
1.20 1.60
0.89 1.40
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
-
0.18
0.40 0.60
0.08 0.20
0.6 REF.
0.85 1.15
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Drain – Source Voltage
VDSS
60
V
Gate – Source Voltage
VGSS
±20
V
Drain Current
Continuous
ID
115
Pulsed
IDP1
0.8
mA
A
Drain Reverse Current
Continuous
Pulsed
IDR
IDRP1
115
0.8
mA
A
Total Power Dissipation
PD2
225
mW
Channel & Storage Temperature
TCH, TSTG
150, -55~150
°C
Note: 1. Pulse width ≦10µS, Duty cycle≦1%.
2. When mounted on 1x0.75x0.062 inch glass epoxy board.
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN TYP MAX UNIT
Gate-Source Leakage Current
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
IGSS
-
-
±10
µA
V(BR)DSS
60
-
-
V
IDSS
-
-
1
µA
VGS(TH)
1
1.85
2.5
V
-
Drain-Source On-State Resistance*
RDS(ON) *
-
-
7.5
Ω
-
7.5
Forward Transfer Admittance
|YFS|*
80
-
-
mS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
-
25
50
-
10
25
pF
-
3.0
5.0
Turn-on Delay Time
Turn-off Delay Time
Td(ON) *
-
Td(OFF) *
-
12
20
nS
20
30
* Pulse width ≦300µS, Duty cycle≦1%
TEST CONDITION
VGS=±20V, VDS=0V
VGS=0V, ID =10µA
VDS=60V, VGS=0V
VDS= VGS, ID =250µA
VGS=10V, ID=0.5A
VGS=5V, ID=0.05A
VDS=10V, ID=0.2A
VDS=25V
VGS=0V
f=1MHz
VDD≒30V, V Gs=10V
I D=200mA, RL=150Ω, RGS=10Ω
SWITCHING CHARACTERISTICS MEASUREMENT CIRCUIT
08-Mar-2010 Rev. B
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