S2N7002 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Small Signal MOSFET

Elektronische Bauelemente
S2N7002
115 mA, 60 V, R_DS(ON) = 7.5 Ω
N-Ch Small Signal MOSFET
FEATURES
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
A
L
Pb-Free Package is Available
PACKAGING INFORMATION
3
Top View
CB
1
1
2
Drain
3
Drain
3
K
E
D
3
2
702
W
1
Gate
2
Source
702 =Device Code
W =Date Code
1
Gate
2
Source
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.80 2.00
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.013 0.10
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
MAXIMUM RATINGS (at TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Drain-Source Voltage
Drain-Gate Voltage(RGS=1.0 MΩ)
Continuous Drain Current
TC=25°C ¹
TC=100°C ¹
Pulsed Drain Current ²
Continuous Gate-Source Voltage
Non-Repetitive Gate-Source Voltage(tP≦50µS)
VDSS
60
VDGR
60
ID
±115
±75
IDM
±800
VGS
±20
VGSM
±40
THERMAL CHARACTERISTICS
Vdc
Vdc
mAdc
mAdc
mAdc
Vdc
Vpk
Total Device Dissipation TA=25°C
FR-5 Board ³
Derate above 25°C
PD
225
1.8
Thermal Resistance, Junction to Ambient
RθJA
556
Junction and Storage Temperature
TJ, TSTG
-55~150
Note: 1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦ 2.0%
3. FR-5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITION
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero
Gate
Voltage
Drain
Current
TJ
TJ
=25°C
=125°C
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V(BR)DSS
60
-
IDSS
-
-
-
-
IGSSF
-
-
IGSSR
-
-
ON CHARACTERISTICS¹
-
1.0
500
100
-100
Gate Threshold Voltage
On-State Drain Current
Static Drain-Source On-State Voltage
VGS(th)
ID(ON)
VDS(ON)
1.0
1.6
2.5
500
-
-
-
-
3.75
-
-
0.375
Static Drain-Source On-State Resistance
(TA=25°C)
RDS(ON)
-
1.4
7.5
-
1.8
7.5
Static Drain-Source On-State Resistance
(TA=125°C)
RDS(ON)
-
-
-
13.5
-
13.5
Forward Transconductance
gFS
80
-
-
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
-
17
50
Coss
-
10
25
Crss
-
2.5
5.0
SWITCHING CHARACTERISTICS¹
Turn-On Delay Time
Turn-Off Delay Time
td(ON)
-
7
20
td(OFF)
-
11
40
BODY-DRAIN DIODE RATINGS
Diode Forward On-Voltage
VSD
-
Source Current Continuous(Body Diode)
IS
-
Source Current Pulsed
ISM
-
Note: 1. Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦ 2.0%
-
-1.5
-
-115
-
-800
Vdc
µAdc
nAdc
nAdc
VGS = 0, ID = 10µAdc
VGS=0, VDS = 60Vdc
VGS=20Vdc
VGS=-20Vdc
Vdc
mA
Vdc
Ω
Ω
mmhos
VDS = VGS, ID =250µAdc
VDS≧2.0VDS(ON),VGS=10Vdc
VGS=10Vdc, ID =500mAdc
VGS=5Vdc, ID =50mAdc
VGS=10Vdc, ID =500mAdc
VGS=5Vdc, ID =50mAdc
VGS=10Vdc, ID =500mAdc
VGS=5Vdc, ID =50mAdc
VDS≧2VDS(ON),ID =200mAdc
pF VDS=25Vdc, VGS=0, f=1MHz
pF VDS=25Vdc, VGS=0, f=1MHz
pF VDS=25Vdc, VGS=0, f=1MHz
nS
VDD=25Vdc, ,ID≅500mAdc
RG=25Ω,RL=50Ω, VGEN=10V
Vdc IS=11.5mAdc,VGS=0V
mAdc
mAdc
http://www.SeCoSGmbH.com/
24-Nov-2009 Rev. B
Any changes of specification will not be informed individually.
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