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S2GBP20-C Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Voltage 200V ~800V 2.0 Amp Glass Passivited Bridge Rectifres
Elektronische Bauelemente
S2GBP20-C ~ S2GBP80-C
Voltage 200V ~ 800V
2.0 Amp Glass Passivited Bridge Rectifiers
RoHS Compliant Product
FEATURES
 Ideal for printed circuit board
 Low forward voltage drop, high current capability
 Reliable low cost construction utilizing molded plastic
technique results in inexpensive product
 These are Halogen & Pb Free components
 This series is UL recognized under Component Index,
file number E255340
GBP
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
13.6 14.0
10.6
11
1
1.5
12.6 13.8
1.05 1.25
0.65 0.85
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
2.9
3.3
3.5
4.1
1.8
2.4
0.4
0.6
6.7
7.3
φ3.0 φ3.4
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameter
Symbol
S2GBP20-C
Part Number
S2GBP40-C S2GBP60-C S2GBP80-C
Unit
Maximum Recurrent Peak Reverse Voltage
VRRM
200
Average Rectified Output
Current @60HZ sine
wave, R-load
TC=140°C
(with heat sink)
TA=29°C
(without heat sink)
IO
Peak Forward Surge Current @
60HZ sine wave, 1 cycle, TJ=25°C
IFSM
Maximum Peak Forward Voltage3
VFM
Peak Reverse Current 2
IRRM
I2t Rating for Fusing @3ms≤t<8.3ms,
TJ=25°C,Rating of per diode
I2t
Mounting Torque @ Recommend torque:5kg·cm TOR
Dielectric Strength1
Vdis
400
600
2
1.2
60
1.05
10
15
8
2
800
V
A
A
V
μA
A2s
Kg‧cm
kV
Typical Thermal Resistance (with heat sink)
RθJC
Typical Thermal Resistance(without heat sink)
RθJA
Typical Thermal Resistance(without heat sink)
RθJL
Operating and Storage temperature range
TJ,TSTG
Notes:
1. Terminals to case,AC 1 minute
2. VRM=VRRM, Pulse measurement, Rating of per diode.
3. IFM=1A, Pulse measurement, Rating of per diode
1.5
55
15
150, -55~150
°C/W
°C/W
°C/W
°C
http://www.SeCoSGmbH.com/
25-Sep-2012 Rev. B
Any changes of specification will not be informed individually.
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