S10GBU20_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – 10.0Amp Glass Passivited Bridge Rectifiers

Elektronische Bauelemente
S10GBU20-C ~ S10GBU80-C
Voltage 200V ~ 800V
10.0Amp Glass Passivited Bridge Rectifiers
RoHS Compliant Product
FEATURES
Ideal for printed circuit board
Reliable low cost construction utilizing
molded plastic technique
Plastic material has Underwriters Laboratory
flammability classification 94V-0
Mounting position: Any
These are Halogen & Pb Free components
This series is UL recognized under Component Index,
file number E255340
GBU
REF.
A
B
C
D
E
F
G
H
Millimeter
Min. Max.
21.7 22.3
18.2 18.8
3.15 3.55
17.5 18.5
1.8
2.2
0.9
1.2
3.4
3.8
5
5.2
REF.
I
J
K
L
M
N
P
Millimeter
Min. Max.
1.8
2.2
1.8
2.2
0.4
0.6
9.9
10.1
5.2
5.8
3.3
3.8
3 × 45°
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameter
Part Number
Symbol
S10GBU20-C S10GBU40-C S10GBU60-C S10GBU80-C
Unit
Maximum Recurrent Peak Reverse Voltage
VRRM
200
Average Rectified
TC=100°C
(with heat sink)
Output Current @50HZ
sine wave, R-load
TA=25°C
IO
(without heat sink)
Peak Forward Surge Current @
50HZ sine wave, 1 cycle, TA=25°C
IFSM
Maximum Peak Forward Voltage³
VFM
Peak Reverse Current ²
IRRM
I²t Rating for Fusing @1ms≤t＜10ms,
I²t
TJ=25°C,Rating of per diode
Mounting Torque @ Recommend
torque:5kg·cm
TOR
Dielectric Strength¹
Vdis
400
600
10
3.6
200
1.1
5
166
8
2
800
V
A
A
V
µA
A²s
Kg‧cm
kV
Typical Thermal Resistance (with heat sink)
RθJC
4.8
°C/W
Typical Thermal Resistance(without heat sink) RθJA
21
°C/W
Typical Thermal Resistance(without heat sink) RθJL
4
°C/W
Operating and Storage temperature range
TJ,TSTG
150, -40~150
°C
Notes：
1. Terminals to case，AC 1 minute
2. VRM=VRRM, Pulse measurement, Rating of per diode.
3. IFM=10.0A, Pulse measurement, Rating of per diode
http://www.SeCoSGmbH.com/
29-Jun-2012 Rev. A
Any changes of specification will not be informed individually.
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