PZTA94 Datasheet, PDF (1/2 Pages) Weitron Technology – High-Voltage PNP Transistor Surface Mount

Elektronische Bauelemente
Description
The PZTA94 is designed for application
requires high voltage.
RoHS Compliant Product
PZTA94
PNP Transistor
Epitaxial Planar Transistor
SOT-223
Features
*High Current Gain: IC=300mA at 25 ^oC
*High Voltage: VCEO=400V (min) at IC=1mA
*Complementary With PZTA44
A9 4
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
ABSOLUTE MAXIMUM RATINGS Ta=25^oC
Symbol
Parameter
V_CBO
Collector-Base Voltage
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
PD
Total Power Dissipation
TJ,Tstg
Junction and Storage Temperature
Value
-400
-400
-6
-500
2
-55~+150
Units
V
V
V
mA
W
C^O
ELECTRICAL CHARACTERISTICS Tamb=25^oC unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Base Cutoff Current
Collector Saturation Voltage
Base Satruation Voltage
DC Current Gain
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
VBE(sat)
*hFE1
*hFE2
*hFE3
*hFE4
Min
-400
-400
-6
-
-
-
-
-
-
-
40
50
45
40
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-100
-100
-500
-350
-500
-750
-750
-
300
-
-
Unit
V
V
V
nA
nA
nA
mV
mV
mV
mV
Test Conditions
IC=-100µA,IE=0
IC=-1 mA,IB=0
IE=-100µA,IC=0
VCB=-4 00V,IE=0
VBE=-6 V,IC=0
VCE=-4 00V,VBE=0
IC=- 1mA,IB=-0.1mA
IC=- 10mA,IB=-1 mA
IC=- 50mA,IB=-5 mA
IC=- 10mA,IB=-1 mA
VCE=-10V, IC=-1 mA
VCE=-10 V, IC=-10 mA
VCE=-10 V, IC=-50 mA
VCE=-10 V, IC=-100mA
*Pulse width 380µs, Duty Cycle 2%
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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