PZTA44_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – NPN Silicon Medium Power Transistor

Elektronische Bauelemente
PZTA44
200mA , 400V
NPN Silicon Medium Power Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
PACKAGE INFORMATION
Package
MPQ
SOT-223
2.5K
Leader Size
13’ inch
SOT-223
A
M
4
Top View C B
K
L
E
1
2
3
D
F
GH
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.20 6.70
6.70 7.30
3.30 3.70
1.42 1.90
4.50 4.70
0.60 0.82
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
-
0.10
-
-
0.25 0.35
-
-
2.30 REF.
2.90 3.10
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Current -Pulsed
Collector Power Dissipation
Storage Temperature
VCBO
VCEO
VEBO
IC
ICM
PC
TSTG
400
400
6
200
300
1
150, -65~150
Unit
V
V
V
mA
mA
W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min.
Max.
Unit
Collector-base breakdown voltage
V(BR)CBO
400
-
V
Collector-emitter breakdown voltage
V(BR)CEO
400
-
V
Emitter-base breakdown voltage
V(BR)EBO
6
-
V
Collector cut-off current
ICBO
-
100
nA
Emitter cut-off current
IEBO
-
100
nA
40
-
DC current gain¹
50
200
h_FE
45
-
40
-
Collector-emitter saturation voltage¹
-
VCE(sat)
-
0.4
0.5
V
-
0.75
Base-emitter voltage
VBE(on)
-
0.85
V
Transition frequency
fT
20
-
MHz
Collector ca pacitance
Emitter capacitance
CC
-
7
pF
CE
-
180
pF
Test Conditions
IC=0.1mA , IE=0
IC= 1mA, IB=0
IE= 100µA, IC=0
VCB= 400V, IE=0
VEB= 4V, IC=0
VCE= 10V, IC= 1mA
VCE= 10V, IC= 10mA
VCE= 10V, IC= 50mA
VCE= 10V, IC= 100mA
IC=1mA, IB= 0.1mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE= 10V, IC=1mA
VCE= 10V, IC= 10mA,
f=100MHz
VCB=20V, IE=0, f=0MHz
VCB=0.5V, IE=0, f=0MHz
http://www.SeCoSGmbH.com/
29-Jul-2014 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 1