PZTA44 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN high-voltage transistor

Elektronische Bauelemente
PZTA44
300mA, 400V
NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR
FEATURES
. RoHS Compliant Product
. Low Current
I_CM : 300 mA (Max.)
. High Voltage
V_CEO : 400 V
C
E
C
B
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS ( T_A = 25к unless otherwise noted )
TYPE NUMBER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Transition Frequency
VCBO
VCEO
VEBO
IC
PC
Junction and Storage Temperature
TJ, TSTG
SOT-223
f 


f 
123
VALUE
500
400
6
300
1000
-55 ~ +150
f
5
5

0D[
efe
efe
efe
UNIT
V
V
V
mA
mW
к
ƔELECTRICAL CHARACTERISTICS ( Tamb = 25к unless otherwise specified )
TYPE NUMBER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX.
Collector-Base Breakdown Voltage
V(BR)CBO
IC = 100 μA, IE = 0
500
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 1 mA, IB = 0
400
Emitter-Base Breakdown Voltage
V(BR)EBO
IE = 100 μA, IC = 0
6
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
VCB = 400 V, IE = 0
VEB = 4 V, IC = 0
VCE = 10 V, IC = 1 mA
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 50 mA
VCE = 10 V, IC = 100 mA
0.1
0.1
40
50
300
45
40
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Capacitance
Emitter Capacitance
VCE(SAT)
IC = 1 mA, IB = 0.1 mA
VCE(SAT)
IC = 10 mA, IB = 1 mA
VCE(SAT)
IC = 50 mA, IB = 5 mA
VBE(SAT)
IC = 10 mA, IB = 1 mA
fT
VCE = 10 V, IC = 10 mA, f = 100 MHZ
20
Cc
VCB = 20 V, IE = 0, f = 1MHZ
Ce
VEB = 0.5 V, IC = 0, f = 1MHZ
0.4
0.5
0.75
0.85
7
180
UNIT
V
V
V
μA
μA
V
V
V
V
MHZ
pF
pF
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 1