PZTA42_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

Elektronische Bauelemente
PZTA42
0.2A , 300V
NPN Silicon Medium Power Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 For AF driver and output stages
 Power switching applications
PACKAGE INFORMATION
Package
MPQ
SOT-223
2.5K
Leader Size
13 inch
SOT-223
A
M
4
Top View _{C B}
K
L
E
1
2
3
D
F
GH
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.20 6.70
6.70 7.30
3.30 3.70
1.42 1.90
4.50 4.70
0.60 0.82
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
-
0.10
-
-
0.25 0.35
-
-
2.30 REF.
2.90 3.10
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Current -Pulsed
Collector Power Dissipation
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
I_CM
P_C
T_J, T_STG
300
300
6
0.2
0.5
1
150, -55~150
Unit
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min.
Max.
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter-Base Cutoff Current
V_(BR)CBO
300
-
V
V_(BR)CEO
300
-
V
V_(BR)EBO
6
-
V
I_CBO
-
0.1
μA
I_EBO
-
0.1
μA
25
-
DC current gain
Collector-emitter saturation voltage¹
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
h_FE
40
40
V_CE(sat)
-
V_BE(sat)
-
f_T
50
C_ob
-
-
-
0.5
V
0.9
V
-
MHz
3
pF
Test Conditions
I_C=100μA , I_E=0
I_C=1mA, I_B=0
I_E=100μA, I_C=0
V_CB=200V, I_E=0
V_EB=6V, I_C=0
V_CE=10V, I_C=1mA
V_CE=10V, I_C=10mA
V_CE=10V, I_C=30mA
I_C=20mA, I_B=2mA
I_C=20mA, I_B=2mA
V_CE=20V, I_C=10mA, f=100MH_Z
V_CB=20V, I_E=0, f=1MH_Z
http://www.SeCoSGmbH.com/
19-Feb-2013 Rev. B
Any changes of specification will not be informed individually.
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