PZTA27 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Epitaxial Planar Transistor

Elektronische Bauelemente
PZTA27
NPN Transistor
Epitaxial Planar Transistor
RoHS Compliant Product
Description
SOT-223
The PZTA27 is designed for darlington
amplifier high current gain collector
current to 500mA.
Date Code
A2 7
B
C
E
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
ABSOLUTE MAXIMUM RATINGS Ta=25^oC
Symbol
Parameter
V_CBO
Collector-Base Voltage
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
PD
Total Power Dissipation
TJ,Tstg
Junction and Storage Temperature
Value
60
60
10
500
2
-55~+150
ELECTRICAL CHARACTERISTICS Tamb=25^oC
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Base Cutoff Current
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
ICES
Min
60
60
10
-
-
-
Collector Saturation Voltage
Base Satruation Voltage
DC Current Gain
VCE(sat)
VBE(sat)
hFE1
hFE2
-
-
10K
10K
unless otherwise specified
Typ.
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
100
100
500
1.5
2
-
-
Unit
V
V
V
nA
nA
nA
V
V
Test Conditions
IC= 100µA,IE=0
IC= 100µA,VBE=0
IE= 10µA,IC=0
VCB= 5 0V,IE=0
VE B= 1 0V,IC=0
VCE= 5 0V
IC=100m A,IB=0.1 mA
IC=100m A,VCE=5V
VCE= 5 V, IC=10 mA
VCE= 5 V, IC=100mA
Units
V
V
V
mA
W
C^O
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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