PZTA14_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Transistor

Elektronische Bauelemente
PZTA14
NPN Transistor
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-223
Description
The PZTA14 is darlington amplifier
transistor designed for applications
requiring extremely high current gain.
Date Code
A1 4
BC
E
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
ABSOLUTE MAXIMUM RATINGS Ta=25^oC
Symbol
Parameter
V_CBO
Collector-Base Voltage
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
PD
Total Power Dissipation
TJ,Tstg
Junction and Storage Temperature
Value
30
30
10
300
2
-55~+150
Units
V
V
V
mA
W
C^O
ELECTRICAL CHARACTERISTICS Tamb=25^oC
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
Min
30
30
10
-
-
Collector Saturation Voltage
Base Satruation Voltage
VCE(sat)
-
VBE(on)
-
DC Current Gain
hFE1
hFE2
10K
20K
Gain-Bandwidth Product
fT
125
unless otherwise specified
Typ.
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
100
100
1.5
2
-
-
-
Unit
V
V
V
nA
nA
V
V
MHz
Test Conditions
IC= 100µA
IC= 1mA
IE= 10µA
VCB= 3 0V
VE B= 1 0V
IC=100m A,IB=0.1 mA
VCE= 5 V, IC=100mA
VCE= 5 V, IC=10 mA
VCE= 5 V, IC=100mA
VCE= 5 V, IC= 10mA,f=100MHz
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2