PZT987A_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Medium Power High Gain Transistor

Elektronische Bauelemente
Description
The PZT987A is designed for battery
powered circuits and fast charge
converters.
PZT987A
PNP Silicon Planar
Medium Power High Gain Transistor
RoHS Compliant Product
SOT-223
Features
* Gain Of 200 At Ic=2A And Very
Low Saturation Voltage
9 8 7A
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
MAXIMUM RATINGS* (T_amb =25^oC, unless otherwise specified)
Symbol
Parameter
V_CBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)
ICM
Collector Current (Pulse)
Value
-25
-25
-5
-3
-6
Units
V
V
V
A
A
PD
TJ,Tstg
Total Power Dissipation
Junction and Storage Temperature
2
W
-55~+150
C^O
*The power which can be dissipated assuming the device is mounted in a typical on a P.C.B. with copper equal to 4 square inch min..
ELECTRICAL CHARACTERISTICS Tamb=25^oC unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
Base Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Gain-Bandwidth Product
Iutput Capacitance
Output Capacitance
On-Time
Off-Time
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
*hFE4
fT
Cib
Cob
Ton
Toff
Min
-25
-25
-5
-
-
-
-
-
-
-
300
250
200
100
100
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-0.8
-
-
-
-
-
225
25
35
400
Max
-
-
-
-100
-100
-250
-450
-500
-1
-
800
-
-
-
-
-
-
-
-
Unit
V
V
V
nA
nA
mV
V
V
MHz
pF
pF
nS
Test Conditions
IC=-100µA, IE=0
IC=-10mA, IB=0
IE=-100µA, IC=0
VCB=-15V, IE=0
VEB=-4V,I C=0
IC=-1A,IB=-10 mA
I C=- 2A,IB=-20mA
I C=- 3A,IB=-100mA
I C=- 1A,IB=-10 mA
IC=-1A,VCE=-2V
VCE=-2 V, IC=-10 mA
VCE=-2 V, IC=-1 A
VCE=- 2 V, IC=-2A
VCE=- 2 V, IC=-6A
VCE=- 5 V, IC=-50 mA, f=50MHz
VCB=-0.5V, f=1MHz
VCB=-10V, f=1MHz
VCC=-10V,IC=-500mA,IB1=IB2=-50mA
*Measured under pulse condition. Pulse width 300µs, Duty Cycle 2%
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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