PZT965 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Epitaxial Planar Transistor

Elektronische Bauelemente
Description
The PZT965 is designed for use as
AF output amplifier and flash unit.
PZT965
NPN Transistor
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-223
965
ABSOLUTE MAXIMUM RATINGS Ta=25^oC
Symbol
Parameter
V_CBO
Collector-Base Voltage
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Continous)
IC
Collector Current (Peak PT=10mS)
PD
Total Power Dissipation
TJ,Tstg
Junction and Storage Temperature
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Value
40
20
7
5
8
2
-55~+150
Units
V
V
V
A
W
C^O
ELECTRICAL CHARACTERISTICS Tamb=25^oC unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE1
*hFE2
fT
Cob
Min
40
20
7
-
-
-
230
150
-
-
Typ.
-
-
-
-
-
0.35
-
-
150
-
Max
-
-
-
0.1
0.1
1
800
-
-
50
Unit
V
V
V
uA
uA
V
MHz
pF
Test Conditions
IC= 100µA
IC= 1mA
IE= 10µA
VCB= 60V
VEB=7V
IC=3A,IB=0.1 A
VCE= 2 V, IC=0.5 A
VCE= 2 V, IC=2 A
VCE= 6 V, IE= 50mA
VCB= 20V, f=1MHz
*Pulse width 300µs, Duty Cycle 2%
Classification of hFE
Rank
Range
R
340~600
http://www.SeCoSGmbH.com
21-Oct-2009 Rev. B
Any changing of specification will not be informed individual
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