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PZT882_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Transistor | |||
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Elektronische Bauelemente
Description
The PZT882 is suited for the output
stage of 2W audio, voltage regulator,
and relay driver.
PZT882
NPN Transistor
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-223
88 2
ABSOLUTE MAXIMUM RATINGS Ta=25oC
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
IC
Collector Current
PD
Total Power Dissipation
TJ,Tstg
Junction and Storage Temperature
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0Í
10Í
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13ÍTYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Value
40
30
5
3
2
-55~+150
Units
V
V
V
A
W
CO
ELECTRICAL CHARACTERISTICS Tamb=25oC
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
Base Saturation Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min
40
30
5
-
-
-
-
30
100
-
-
unless otherwise specified
Typ.
-
-
-
-
-
-
-
-
-
90
45
Max
-
-
-
1
1
0.5
2
-
500
-
-
Unit
V
V
V
uA
uA
V
V
MHz
pF
Test Conditions
IC= 100µA, IE=0
IC= 1mA, IB=0
IE= 10µA
VCB= 30V
VEB=3V
IC=2A,IB=0.2 A
IC=2A,IB=0.2 A
VCE= 2 V, IC=20mA
VCE= 2 V, IC=1 A
VCE= 5 V, IC= 0.1A, f=100MHz
VCB= 10V, f=1MHz,IE=0
Classification of hFE
Rank
Range
Q
100~200
P
160~320
E
250~500
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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