PZT882J Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – 3A, 40V NPN Silicon Medium Power Transistor

Elektronische Bauelemente
PZT882J
3A, 40V
NPN Silicon Medium Power Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low collector-emitter saturation voltage
CLASSIFICATION OF h_FE
Product-Rank PZT882J-O
Range
100~200
PZT882J-Y
160~320
PZT882J-GR
200~400
MARKING
D882
PACKAGE INFORMATION
Package
MPQ
SOT-223
2.5K
Leader Size
13 inch
SOT-223
A
M
4
Top View _{C B}
K
L
E
1
2
3
D
F
GH
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.90 6.70
6.70 7.30
3.30 3.80
1.42 1.90
4.45 4.75
0.60 0.85
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
-
0.18
2.00 REF.
0.20 0.40
1.10 REF.
2.30 REF.
2.80 3.20
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Dissipation
Junction and Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Collector-Base Breakdown Voltage
V(BR)CBO
40
-
-
Collector-Emitter Breakdown Voltage
V(BR)CEO
30
-
-
Emitter-Base Breakdown Voltage
V(BR)EBO
6
-
-
Collector Cut-Off Current
ICBO
-
-
1
Collector Cut-Off Current
ICEO
-
-
10
Emitter Cut-Off Current
IEBO
-
-
1
DC Current Gain
100
-
400
h_FE
32
-
-
Collector-Emitter Saturation Voltage
VCE(sat)
-
-
0.5
Base-Emitter Saturation Voltage
VBE(sat)
-
-
1.5
Transition Frequency
fT
-
50
-
Rating
40
30
6
3
1.25
-55~150
Unit
V
V
V
A
W
°C
Unit
Test Condition
V IC=100µA, IE=0
V IC=10mA, IB=0
V IE=100µA, IC=0
µA VCB=40V, IE=0
µA VCE=30V, IB=0
µA VEB=6V, IC=0
VCE=2V, IC=1A
VCE=2V, IC=100mA
V IC=2A, IB=200mA
V IC=2A, IB=200mA
MHz VCE=5V, IC=100mA, f=10MHz
http://www.SeCoSGmbH.com/
25-Jan-2017 Rev. B
Any changes of specification will not be informed individually.
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