PZT882 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Epitaxial Planar Transistor

Elektronische Bauelemente
Description
The PZT882 is suited for the output
stage of 2W audio, voltage regulator,
and relay driver.
PZT882
NPN Transistor
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-223
88 2
ABSOLUTE MAXIMUM RATINGS Ta=25^oC
Symbol
Parameter
V_CBO
Collector-Base Voltage
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
IC
Collector Current
PD
Total Power Dissipation
TJ,Tstg
Junction and Storage Temperature
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Value
40
30
5
3
2
-55~+150
Units
V
V
V
A
W
C^O
ELECTRICAL CHARACTERISTICS Tamb=25^oC
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
Base Saturation Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min
40
30
5
-
-
-
-
30
100
-
-
unless otherwise specified
Typ.
-
-
-
-
-
-
-
-
-
90
45
Max
-
-
-
1
1
0.5
2
-
500
-
-
Unit
V
V
V
uA
uA
V
V
MHz
pF
Test Conditions
IC= 100µA, IE=0
IC= 1mA, IB=0
IE= 10µA
VCB= 30V
VEB=3V
IC=2A,IB=0.2 A
IC=2A,IB=0.2 A
VCE= 2 V, IC=20mA
VCE= 2 V, IC=1 A
VCE= 5 V, IC= 0.1A, f=100MHz
VCB= 10V, f=1MHz,IE=0
Classification of hFE
Rank
Range
Q
100~200
P
160~320
E
250~500
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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