PZT772_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Transistor

Elektronische Bauelemente
PZT772
PNP Transistor
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-223
Description
The PZT772 is designed for using
in output stage of 2W amplifier,
voltage regulator, DC-DC converter
and driver.
772
MAXIMUM RATINGS* (T_amb =25^oC , unless otherwise specified)
REF. _Min.
A 6.70
C 2.90
D 0.02
E
0̓
I 0.60
H 0.25
Max.
7.30
3.10
0.10
10̓
0.80
0.35
REF.
B
J
1
2
3
4
5
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Symbol
V_CBO
Collector-Base Voltage
Parameter
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
IC
Collector Current-Continuous
PD
Total Power Dissipation
TJ,Tstg
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICS Tamb=25ć unlessotherwise specified
Value
-40
-30
-5
-3
1.5
-55~-150
Units
V
V
V
A
W
C^O
Parameter
Symbol
MIN
TYP MAX UNIT
Test conditions
Collector-base breakdown voltage
V(BR)_CBO
-40
Collector-emitter breakdown voltage _V(BR)CEO
-30
Emitter-base breakdown voltage
V(BR)_EBO
-5
Collector cut-off current
I_CBO
_
Emitter cut-off current
I_EBO
_
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF hFE₂
Rank
Q
P
Range
100-200
http://www.SeCoSGmbH.com
160-320
01-Jun-2002 Rev. A
h_{FE 1}
30
h_{FE 2}
100
V_CE(sat)
_
V_BE(sat)
_
fT
_
Cob
_
E
250-500
_
_
V
Ic=-100u A
_
_
V
I_C= -10 mA
_
_
V
I_E= -10uA
_
-1
uA
V_CB= -30 V
_
1
uA VEB=-3V
_
_
_
V_CE= -2V, I_C= -20mA
160
500
_
V_CE=-2V, I_C= -1mA
-0.3
-0.5
V
I_C=-2A, I_B= -0.2A
-1
-2
V
I_C=-2A, I_B= -0.2A
80
_
MHz
V_CE=-20V,IC=-20mA ,
f = 100MHz
55
_
pF VCB=-10V, f=1MHz
Any changing of specification will not be informed individual
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