PZT6718 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Epitaxial Planar Transistor

Elektronische Bauelemente
PZT6718
NPN Transistor
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-223
Description
The PZT6718 is designed for general
purpose medium power amplifier and
switching.
Date Code
6 7 18
BC
E
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
ABSOLUTE MAXIMUM RATINGS Ta=25^oC
Symbol
Parameter
V_CBO
Collector-Base Voltage
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
PD
Total Power Dissipation
TJ,Tstg
Junction and Storage Temperature
Value
100
100
5
1
1.5
-55~+150
Units
V
V
V
A
W
C^O
ELECTRICAL CHARACTERISTICS Tamb=25^oC unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector Saturation Voltage
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
Min
100
100
5
-
-
Typ.
-
-
-
-
-
Max Unit Test Conditions
-
V IC= 100µA
-
V IC= 1mA
-
V IE= 10µA
100 nA VCB= 80V
350 mV IC=350mA,IB=35mA
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
*hFE1
80
-
-
VCE= 1 V, IC=50 mA
*hFE2
100
-
310
VCE= 1 V, IC=250mA
*hFE3
20
-
-
VCE= 1 V, IC=500mA
fT
50
-
-
MHz VCE= 10V, IC= 50mA,f=100MHz
Cob
-
-
20
pF VCB=10V, f=1MHz
*Pulse width 380µs, Duty Cycle 2%
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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