PZT669A Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Epitaxial Planar Transistor

Elektronische Bauelemente
PZT669A
NPN Silicon
Epitaxial Planar Transistor
RoHS Compliant Product
Description
The PZT669A is designed for low frequency
power amplifier complementary pair with PZT649A.
SOT-223
6 6 9A
REF.
A
C
D
E
I
H
Min.
6.70
2.90
0.02
0̓
0.60
0.25
Max.
7.30
3.10
0.10
10̓
0.80
0.35
REF.
B
J
1
2
3
4
5
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings at TA=25^oC
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current (DC)
Collect Current (Pulse)
Total Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VCBO
VCEO
VE BO
IC
IC
PD
Tj, Tstg
Ratings
180
160
5..0
1..5
3.0
1.5
-55~+150
Unit
V
V
V
A
A
W
o_C
ELECTRICAL CHARACTERISTICS (Tamb=25^oC)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Output Capacitance
Collector-Emitter Saturation Voltage
Base-Emitter Voltage, On
DC Current Gain
DC Current Gain
Transition Frequency
Symbol
BV_CBO
BV _CEO
BV_EBO
ICBO
Cob
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Min.
180
160
5
-
-
-
-
60
30
-
Typ.
-
-
-
-
14
-
-
-
-
140
Max.
-
-
-
10
-
1
1.5
200
-
-
Unit
V
V
V
uA
pF
V
V
MHz
Test Conditions
IC=-1mA, IE=0
IC=-10mA, IB =0
IE=1m A, IC=0
VCB=160V, IE=0
VCB=10V,f=1MHz
IC=600mA, I B=50mA
VCE=5V, I C=150mA
VCE=5V, I C=150mA
VCE=5V, I C=500mA
VCE=5V, I C=10mA, f=100MHz
*Pulse Test: Pulse Width 380us, Duty Cycle 2%
CLASSIFICATION OF hFE1
Rank
hFE1
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
B
60~120
C
100~200
Any changing of specification will not be informed individual
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