PZT559_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Silicon Planar

Elektronische Bauelemente
Description
The PZT559 is designed for general
purpose switching and amplifier
applications.
RoHS Compliant Product
PZT559
PNP Silicon Planar
High Current Transistor
SOT-223
Features
* Excellent Gain Characteristic Specified
Up To 3 Amps.
* 4 Amps Continuous Current, Up To
10 Amps Peak Current
* Very Low Saturation Voltages
559
REF.
A
C
D
E
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
REF.
B
J
1
2
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
MAXIMUM RATINGS* (T_amb =25^oC, unless otherwise specified)
I
0.60 0.80
3
3.30 3.70
H 0.25 0.35
4
3.30 3.70
5
1.40 1.80
Symbol
Parameter
Value
Units
V_CBO
Collector-Base Voltage
-180
V
VCEO
Collector-Emitter Voltage
-140
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current (DC)
-4
A
ICM
Collector Current (Pulse)
-10
A
PD
Total Power Dissipation
3
W
TJ,Tstg
Junction and Storage Temperature
-55~+150
C^O
*The power which can be dissipated assuming the device is mounted in a typical on a P.C.B. with copper equal to 4 square inch min..
ELECTRICAL CHARACTERISTICS Tamb=25^oC unless otherwise specified
Parameter
Symbol Min Typ. Max
Collector-Base Breakdown Voltage
BVCBO -180
-
-
Collector-Base Breakdown Voltage
BVCER -180
-
-
Collector-Emitter Breakdown Voltage *BVCEO
-140
-
-
Emitter-Base Breakdown Voltage
BVEBO
-6
-
-
Collector-Base Cutoff Current
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
ICBO
-
ICER
-
IEBO
-
*VCE(sat)1 ^-
*VCE(sat)2 -
*VCE(sat)3 -
-
-50
-
-50
-
-10
-
-60
-
-120
-
-150
*VCE(sat)4 -
-
-370
Base Saturation Voltage
*VBE(sat) -
- _-1.11
Base-Emitter Voltage
*VBE(on)
-
-
-0.95
*hFE1 100
-
-
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
On-Time
Off-Time
*hFE2
*hFE3
*hFE4
fT
Cob
Ton
Toff
100 200 300
75 140
-
-
10
-
-
110
-
-
40
-
-
68
-
- 1030
-
*Measured under pulse condition. Pulse width 300µs, Duty Cycle 2%
http://www.SeCoSGmbH.com
Unit
V
V
V
V
nA
nA
nA
mV
V
V
MH z
pF
nS
Test Conditions
IC=-100µA, IE=0
IC=-1µA, RB 1K
IC=-10mA, IB=0
IE=-100µA, IC=0
VCB=-150V, IE=0
VCB=-150V,R 1K
VEB=-6V,I C=0
IC=-100m A,IB=-5mA
IC=-500 A,IB=-50mA
I C=- 1A,IB=-100mA
I C=- 3A,IB=-300mA
I C=- 3A,IB=-30 0mA
IC=-3A,VCE=-5V
VCE=-5 V, IC=-10 mA
VCE=-5 V, IC=-1 A
VCE=- 5 V, IC=-3A
VCE=- 5 V, IC=-10 A
VCE=- 10V, IC=-100mA, f=50MHz
VCB=-20V, f=1MHz
VCC=-50V,IC=-1A,IB1=IB2=-100mA
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2