PZT559A_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – Silicon Planar Medium Power Transistor

Elektronische Bauelemente
PZT559A
PNP Silicon
Silicon Planar Medium Power Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The PZT559A is designed for general purpose switching
and amplifier applications.
SOT-223
FEATURES
4 Amps continuous current, up to 10 Amps peak current.
Excellent gain characteristic specified up to 3 Amps
Very low saturation voltages
MARKING
559A
Date code
PACKAGE INFORMATION
Package
MPQ
SOT-223
2.5K
Leader Size
13’ inch
REF.
A
B
C
D
E
F
I
O
Millimeter
Min. Max.
6.30
6.70
6.70
7.30
3.30
3.70
1.42
1.90
4.60 REF.
0.60
0.80
0.02
0.10
0°
10°
REF.
G
H
J
K
L
M
N
Millimeter
Min. Max.
0.02 0.10
1.50 2.00
0.25 0.35
0.85 1.05
2.30 REF.
2.90 3.10
13 TYP.
Collector
2
4
1
Base
3
Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Parameter
Symbol
Ratings
Collector to Base Voltage
VCBO
-180
Collector to Emitter Voltage
VCEO
-140
Emitter to Base Voltage
VEBO
-7
Collector Current (DC)
IC
-4
Collector Current (Pulse)
Total Power Dissipation ¹
Total Power Dissipation ²
ICM
-10
3
PD
1.6
Junction, Storage Temperature
TJ, TSTG
Notes：
1. Surface mounted on 52mm x 52mm x 1.6mm copper pad of FR4 board.
2. Surface mounted on 25mm x 25mm x 1.6mm copper pad of FR4 board.
+150, -55~150
Unit
V
V
V
A
A
W
W
℃
http://www.SeCoSGmbH.com/
28-Apr-2011 Rev. A
Any changes of specification will not be informed individually.
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