PZT4672_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Transistor

Elektronische Bauelemente
Description
The PZT4672 is designed for low
frequency amplifier applications.
RoHS Compliant Product
PZT4672
NPN Transistor
Epitaxial Planar Transistor
SOT-223
Features
*Excellent DC Current Gain Characteristic
*Low Saturation Voltage, Typically
VCE(sat)=0.1V at IC/IB=1A/50mA
467 2
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
ABSOLUTE MAXIMUM RATINGS Ta=25^oC
Symbol
Parameter
V_CBO
Collector-Base Voltage
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
IC
Collector Current (DC)
Collector Current (Pulse PW=10ms)
PD
Total Power Dissipation
TJ,Tstg
Junction and Storage Temperature
Value
60
50
6
2
5
2
-55~+150
Units
V
V
V
A
W
C^O
ELECTRICAL CHARACTERISTICS Tamb=25^oC unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
Min
60
50
6
-
-
-
120
-
-
Typ.
-
-
-
-
-
0.1
-
210
25
Max
-
-
-
100
100
0.35
400
-
-
Unit
V
V
V
nA
nA
V
MHz
pF
Test Conditions
IC= 50µA,IE=0
IC= 1mA,IB=0
IE= 50µA,IC=0
VCB= 60V,IE=0
VEB=5V,IC=0
IC=1 A,IB=50mA
VCE= 2 V, IC=500mA
VCE= 2 V, IC= 500 mA,f=100MHz
VCB=10V, f=1MHz,IE=0
*Pulse width 380µs, Duty Cycle 2%
Classification of hFE
Rank
Range
A
120~240
B
200~400
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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