PZT4401_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

Elektronische Bauelemente
Description
RoHS Compliant Product
The PZT4401 is designed for general
purpose switching and amplifier applications.
PZT4401
NPN Transistor
Epitaxial Planar Transistor
SOT-223
Features
*High Power Dissipation: 1500mW at 25 ^oC
*High DC Current Gain: 100~300 at 150mA
*Complementary to PZT4403
440 1
ABSOLUTE MAXIMUM RATINGS Ta=25^oC
Symbol
Parameter
V_CBO
Collector-Base Voltage
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Continous)
PD
Total Power Dissipation
TJ,Tstg
Junction and Storage Temperature
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Value
60
40
5
600
1.5
-55~+150
Units
V
V
V
mA
W
C^O
ELECTRICAL CHARACTERISTICS Tamb=25^oC unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector Saturation Voltage
Base Satruation Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
BVCBO
*BVCEO
BVEBO
ICES
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min
60
40
5
-
-
-
-
750
20
40
80
100
40
250
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
100
400
750
950
1.2
-
-
-
300
-
-
6.5
Unit
V
V
V
nA
mV
mV
mV
V
MHz
pF
Test Conditions
IC= 100µA
IC= 1mA
IE= 10µA
VCE= 35V,VBE=0.4V
IC=150m A,IB=15mA
IC=500m A,IB=50mA
IC=150m A,IB=15mA
IC=500m A,IB=50mA
VCE= 1 V, IC=0.1 mA
VCE= 1 V, IC=1mA
VCE= 1 V, IC=10 mA
VCE= 1 V, IC=150mA
VCE= 2 V, IC=500mA
VCE= 10V, IC= 20mA,f=100MHz
VCB= 5 V, f=1MHz
*Pulse width 380µs, Duty Cycle 2%
Classification of hFE4
Rank
Range
Q
100~210
R
190~300
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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