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| PZT3906_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors | |||
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Elektronische Bauelemente
PZT3906
PNP Silicon
Silicon Planar Medium Power Transistor
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
DESCRIPTION
ï¬ General Purpose Amplifier and Switch Application
ï¬ Low Voltage and Low Current
SOT-223
PACKAGE INFORMATION
Package
SOT-223
MPQ
2.5K
Leader Size
13â inch
Collector
ï«ï
ïï
ïªï
Base
ï¬ï
Emitter
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.20 6.70
6.70 7.30
3.30 3.70
1.42 1.90
4.50 4.70
0.60 0.82
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
-
0.10
-
-
0.25 0.35
-
-
2.30 REF.
2.90 3.10
MAXIMUM RATINGS (TA=25 °C, unless otherwise specified)
Parameter
Symbol
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PD
RθJA
TJ, TSTG
Value
-40
-40
-5
-200
1
125
+150, -55 ~ +150
Unit
V
V
V
mA
W
â/W
â
ELECTRICALCHARACTERISTICS (TA=25 °C unless otherwise specified)
Parameter
Collector - Base Breakdown Voltage 1
Collector - Emitter Breakdown Voltage 1
Emitter - Base Breakdown Voltage 1
Collector Cut - Off Current
Collector cut-off current
Emitter Cut - Off Current
Collector - Emitter Saturation Voltage 1
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICEX
VCE(sat)
Min.
-40
-40
-5
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
Max.
-
-
-
-50
-500
-50
-0.25
-0.4
Base - Emitter Voltage 1
VBE(sat)
-0.65
-
-
-
-0.85
-0.95
hFE1 1
60
-
-
DC Current Gain
hFE2
hFE3
80
-
-
100
-
300
hFE4
60
-
-
Transition Frequency
fT
250
-
-
Collector Output Capacitance
COB
-
4.5
-
Emitter input capacitance
CIB
-
10
-
Delay time
Td
-
35
-
Rise time
Tr
-
35
-
Storage time
Ts
-
225
-
Fall time
Tf
-
75
-
Note:
1. Pulse Testï¼Pulse width ⦠380 us, Duty cycle ⦠2 %
Unit
V
V
V
nA
nA
nA
V
V
V
V
MHz
pF
pF
nS
Test Conditions
IC = -10uA, IE =0
IC = -1mA, IB =0
IC = -10uA, IC =0
VCB = -30V, IE =0
VCE = -30V, IC =0
VCE= -30V, VBE(OFF) = -3V
IC = -10mA, IB = -1mA
IC = -50mA, IB = -5mA
IC = -10mA, IB = -1mA
IC = -50mA, IB = -5mA
VCE = -1V, IC = -100uA
VCE = -1V, IC = -1mA
VCE = -1V, IC = -10mA
VCE = -1V, IC = -50mA
VCE = -20V, IC = -10mA, f=100MHz
VCB= -5V ,IE =0, f = 1 MHz
VBE= -0.5V ,IC =0, f = 1 MHz
VCC = -3V, VBE(OFF) = -0.5V,
IC = -10mA, IB1= -IB1= -1mA
VCC = -3V, IC = -10mA,
IB1= -IB1= -1mA
http://www.SeCoSGmbH.com/
10-Mar-2015 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 2
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