PZT3906 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP switching transistor

Elektronische Bauelemente
Description
The PZT3906 is designed for general
purpose switching and amplifier
applications.
RoHS Compliant Product
PZT3906
PNP Transistor
Epitaxial Planar Transistor
SOT-223
3906
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
ABSOLUTE MAXIMUM RATINGS T_amb =25^oC, unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
-40
VCEO
Collector-Emitter Voltage
-40
VEBO
Emitter-Base Voltage
-5
IC
Collector Current
-200
PD
Total Power Dissipation
1.5
TJ,Tstg
Junction and Storage Temperature
-55~+150
Units
V
V
V
mA
W
C^O
ELECTRICAL CHARACTERISTICS Tamb=25^oC unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
Base Saturation Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
BVCBO
*BVCEO
BVEBO
ICES
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min
-40
-40
-5
-
-
-
-
-0.65
-
60
80
100
60
30
250
-
Typ.
-
-
-
-
-
-
-0.2
-
-0.84
-
-
-
-
-
-
-
Max
-
-
-
-50
-50
-0.25
-0.4
-0.85
-0.95
-
-
300
-
-
-
4.5
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
Test Conditions
IC=-10 µA
IC=-1 mA
IE=-10 µA
VCB=-3 0V
VEB=-3V
IC=-10mA,IB=-1mA
I C=- 50m A,IB=-5 mA
I C=- 10m A,IB=-1 mA
I C=- 50m A,IB=-5 mA
VCE=-1 V, IC=-0.1mA
VCE=-1 V, IC=-1mA
VCE=- 1 V, IC=-10mA
VCE=- 1 V, IC=-50mA
VCE=-1 V, IC=-100mA
VCE=- 20 V, IC=-10 mA, f=100MHz
VCB=-5V, f=1MHz
*Pulse test: Pulse width 300µs, Duty Cycle 2%
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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