PZT359 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – High Current Transistor

Elektronische Bauelemente
PZT359
PNP Silicon Planar
High Current Transistor
RoHS Compliant Product
Features
5 Amps continuous current, up to 10 Amp peak current.
Excellent gain characteristic specified up to 10Amps.
Very low saturation voltage
SOT-223
f 
f
5
5
Mechanical Data
Case: SOT-223 Plastic Package
Weight: approx. 0.021g
Marking Code: 359
xxxx
(xxxx = date code)
C
E
C
B


f 
1 23
1. BASE
2. COLLECTOR
3. EMITTER

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efe
efe
f
Maximum Ratings and Thermal Characteristics
(TA = 25^OC, unless otherwise noted)
Parameter
Symbol
Value
Unit
Junction Temperature
Storage Temperature
Collector-Base Voltage
Tj
+150
O_C
Tstg
-55 to +150
O_C
VCBO
-140
V
Collector-Emitter Voltage
VCEO
-100
V
Emitter-Base Voltage
VEBO
-6
V
Collector Current (DC)
IC
-5
A
Collector Current (Pulse)
IC
-10
A
Total Power Dissipation
PD
3
W
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum.
Electrical Characteristics (TJ = 25^OC, unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(w/ Real Device Limit)
Symbol
BVCBO
BVCER
Min
-140
-140
Typ.
-
-
Max Uni Test Conditions
-
V IC=-100μA, IE=0
-
V IC=-1μA, RB<=1KΩ
Collector-Emitter Breakdown Voltage *BVCEO -100
-
Emitter-Base Breakdown Voltage
BVEBO
-6
-
-
V IC=-10mA, IB=0
-
V IE=-100μA, IC=0
Collector-Base Cutoff Current
ICBO
-
-
-50 nA VCB=-100V, IE=0
Collector-Base Cutoff Current
(w/ Real Device Limit)
ICER
-
-
-50 nA VCB=-100V, R<=1KΩ
Emitter-Base Cutoff Current
Collector Saturation Voltage 1
Collector Saturation Voltage 2
Collector Saturation Voltage 3
Collector Saturation Voltage 4
Base Saturation Voltage
Base-Emitter Voltage
DC Current Gain 1
DC Current Gain 2
DC Current Gain 3
DC Current Gain 4
DC Current Gain 5
Gain-Bandwidth Product
IEBO
-
-
-10 nA VEB=-6V, IC=0
*VCE(sat)1 -
-20 -50 mV IC=-100mA, IB=-10mA
*VCE(sat)2 -
-90 -115 mV IC=-1A, IB=-100mA
*VCE(sat)3 -
-160 -220 mV IC=-2A, IB=-200mA
*VCE(sat)4 -
-300 -420 mV IC=-4A, IB=-400mA
*VBE(sat)
-
-1.01 -1.17 V IC=-4A, IB=-400mA
*VBE(on)
- -0.925 -1.16 V VCE=-1V, IC=-4A
*hFE1
100 200
-
VCE=-1V, IC=-10mA
*hFE2
100 200 300
VCE=-1V, IC=-1A
*hFE3
50
90
-
VCE=-1V, IC=-3A
*hFE4
30
50
-
VCE=-1V, IC=-4A
*hFE5
-
15
-
VCE=-1V, IC=-10A
fT
-
125
- MHz VCE=-10V, IC=-100mA, f=50MHz
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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