PZT358 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Silicon Planar High Current Transistor

Elektronische Bauelemente
PZT358
NPN Transistor
Silicon Planar High Current Transistor
Description
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
SOT-223
The PZT358 is designed for general
purpose switching and amplifier
applications.
Features
C
3
B
E
4
1
* 6Amps Continous Current, Up To
10Amps Peak Current
* Excellent Gain Characteristic,
Specified Up To 10Amps
* Very Low Saturation Voltages
358
MAXIMUM RATINGS* (T_amb =25^oC, unless otherwise specified)
Symbol
Parameter
V_CBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)
Collector Current (Pulse)
I
5
J
REF. _{Min. Max.} REF.
A 6.70 7.30 B
C 2.90 3.10 J
D 0.02 0.10 1
E
0̓
10̓
2
I 0.60 0.80 3
H 0.25 0.35 4
5
2
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Value
200
100
6
6
10
Units
V
V
V
A
PD
Total Power Dissipation
3
W
TJ,Tstg
Junction and Storage Temperature
-55~-150
C^O
*The power which can be dissipated assuming the device is mounted in a typical on a P.C.B. with copper equal to 4 square inch min..
ELECTRICAL CHARACTERISTICS Tamb=25^oC unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
Base Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
On-Time
Off-Time
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
*hFE4
fT
Cob
Ton
Toff
Min
200
100
6
-
-
-
-
-
-
-
-
100
100
50
20
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
200
-
-
130
35
55
1650
Max
-
-
-
10
50
10
50
150
340
1.25
1.1
-
300
-
-
-
-
-
-
Uni
V
V
V
nA
nA
nA
mV
V
V
MHz
pF
Test Conditions
IC= 100µA, IE=0
IC= 10mA, IB=0
IE= 100µA, IC=0
VCB= 150V, IE=0
VCES=100V
VEB= 6V, IC=0
IC= 100mA, IB= 5mA
IC= 2A, IB= 100mA
IC= 5A, IB= 500mA
IC= 5A, IB= 500mA
VCE= 2V, IC= 5A
VCE= 2V, IC= 10mA
VCE= 2V, IC= 2A
VCE= 2V, IC= 4A
VCE= 2V, IC= 10A
VCE= 10V, IC= 100mA, f=50MHz
VCB= 10V, IE=0, f=1MHz
nS _{VCC=10V,IC=1A,IB1=IB2=100mA}
*Measured under pulse condition. Pulse widthЉ300ȝs, Duty CycleЉ2%
Spice parameter data is available upon request for this device.
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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