PZT3019_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – NPN Transistor

Elektronische Bauelemente
Description
The PZT3019 is designed for general
purpose amplifier applications and
switching requiring collector currents 1A.
RoHS Compliant Product
PZT3019
NPN Transistor
Epitaxial Planar Transistor
SOT-223
301 9
ABSOLUTE MAXIMUM RATINGS Ta=25^oC
Symbol
Parameter
V_CBO
Collector-Base Voltage
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
IC
Collector Current
PD
Total Power Dissipation
TJ,Tstg
Junction and Storage Temperature
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Value
140
80
7
1
2
-55~+150
Units
V
V
V
A
W
C^O
ELECTRICAL CHARACTERISTICS Tamb=25^oC
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
Base Saturation Voltage
DC Current Gain
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE1
hFE2
hFE3
hFE4
hFE5
Min
140
80
7
-
-
-
-
50
90
100
50
15
Gain-Bandwidth Product
Output Capacitance
fT
100
Cob
-
unless otherwise specified
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
50
50
0.2
1.1
-
-
300
-
-
-
12
Unit
V
V
V
nA
nA
V
V
MHz
pF
Test Conditions
IC= 100µA
IC=30mA
IE=100 µA
VCB= 90V
VEB=5V
IC=150mA,IB=15mA
I C= 150mA,IB=15mA
VCE= 10 V, IC=0.1mA
VCE= 10 V, IC=10mA
VCE= 10 V, IC=150 mA
VCE= 10 V, IC=500mA
VCE= 10 V, IC=1000mA
VCE= 50mV, IC= 50mA,f=100MHz
VCB= 10V, f=1MHz,IE=0
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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