PZT3019 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – Epitaxial Planar Transistor

Elektronische Bauelemente
Description
The PZT3019 is designed for general
purpose amplifier applications and
switching requiring collector currents 1A.
RoHS Compliant Product
PZT3019
NPN Transistor
Epitaxial Planar Transistor
SOT-223
301 9
ABSOLUTE MAXIMUM RATINGS Ta=25^oC
Symbol
Parameter
V_CBO
Collector-Base Voltage
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
IC
Collector Current
PD
Total Power Dissipation
TJ,Tstg
Junction and Storage Temperature
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Value
140
80
7
1
2
-55~+150
Units
V
V
V
A
W
C^O
ELECTRICAL CHARACTERISTICS Tamb=25^oC
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
Base Saturation Voltage
DC Current Gain
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE1
hFE2
hFE3
hFE4
hFE5
Min
140
80
7
-
-
-
-
50
90
100
50
15
Gain-Bandwidth Product
Output Capacitance
fT
100
Cob
-
unless otherwise specified
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
50
50
0.2
1.1
-
-
300
-
-
-
12
Unit
V
V
V
nA
nA
V
V
MHz
pF
Test Conditions
IC= 100µA
IC=30mA
IE=100 µA
VCB= 90V
VEB=5V
IC=150mA,IB=15mA
I C= 150mA,IB=15mA
VCE= 10 V, IC=0.1mA
VCE= 10 V, IC=10mA
VCE= 10 V, IC=150 mA
VCE= 10 V, IC=500mA
VCE= 10 V, IC=1000mA
VCE= 50mV, IC= 50mA,f=100MHz
VCB= 10V, f=1MHz,IE=0
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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